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ГлавнаяКаталогMemoryMemory ChipsFlashCypress Semiconductor S29GL01GT10DHI010

Cypress Semiconductor S29GL01GT10DHI010

артикул S29GL01GT10DHI010
Cypress Semiconductor
производитель
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 64-Pin Fortified BGA Tray
Datasheet PDF | 2 мб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.32
Automotive
No
PPAP
No
Cell Type
NOR
Chip Density (bit)
1G
Architecture
Sectored
Boot Block
Yes
Block Organization
Symmetrical
Location of Boot Block
Bottom; Top
Address Bus Width (bit)
26
Sector Size
128Kbyte x 1024
Page Size
32byte
Number of Bits/Word (bit)
8/16
Number of Words
128M/64M
Programmability
Yes
Timing Type
Asynchronous
Max. Access Time (ns)
100
Maximum Erase Time (s)
3.5/Sector
Maximum Page Access Time (ns)
15
Maximum Programming Time (ms)
0.75/Word
OE Access Time (ns)
35
Process Technology
45nm, MirrorBit
Interface Type
Parallel
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3; 3.3
Maximum Operating Supply Voltage (V)
3.6
Programming Voltage (V)
2.7 to 3.6
Operating Current (mA)
60
Page Read Current (mA)
25
Program Current (mA)
100
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Industrial
Command Compatible
Yes
ECC Support
Yes
Support of Page Mode
Yes
Minimum Endurance (Cycles)
100000
Packaging
Tray
Supplier Package
Fortified BGA
Pin Count
64
Mounting
Surface Mount
Package Height
0.6(Min)
Package Length
9
Package Width
9
PCB changed
64
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