Cypress Semiconductor S29GL01GT10DHI010
артикул S29GL01GT10DHI010
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 64-Pin Fortified BGA Tray
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Технические параметры
Block Organization
Symmetrical
Location of Boot Block
Bottom; Top
Address Bus Width (bit)
26
Sector Size
128Kbyte x 1024
Number of Bits/Word (bit)
8/16
Max. Access Time (ns)
100
Maximum Erase Time (s)
3.5/Sector
Maximum Page Access Time (ns)
15
Maximum Programming Time (ms)
0.75/Word
Process Technology
45nm, MirrorBit
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3; 3.3
Maximum Operating Supply Voltage (V)
3.6
Programming Voltage (V)
2.7 to 3.6
Operating Current (mA)
60
Page Read Current (mA)
25
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Industrial
Minimum Endurance (Cycles)
100000
Supplier Package
Fortified BGA