Курс ЦБ на 02.05.2024
$91,78
€98,03
onsemi MMBTH10RG
артикул MMBTH10RG
onsemi
производитель
225 mW 50 mA 40 V Small S ignal Transistors NPN RF Transistor SOT-23-3
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Технические параметры
Technical
Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Voltage (VCEO)
40 V
Continuous Collector Current
45 mA
Current Rating
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
4 V
Frequency
450 MHz
Gain Bandwidth Product
450 MHz
hFE Min
50
Max Collector Current
50 mA
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Output Power
225 mW
Polarity
NPN
Schedule B
8541210080, 8541210080; 8541210080
Transition Frequency
450 MHz
Voltage Rating (DC)
40 V
Physical
Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Weight
30 mg
Dimensions
Height
930 µm
Length
2.92 mm
Width
1.3 mm
Compliance
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Supply Chain
Lifecycle Status
Obsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 1 day ago)
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Описание
225 mW 50 mA 40 V Small S ignal Transistors NPN RF Transistor SOT-23-3
Transistor, Bjt, Npn, 40V V(Br)Ceo, 50Ma I(C), Sot-23 Rohs Compliant: Yes
MMBTH10RG Series 40 V 450 MHz NPN Surface Mount RF Transistor - SOT-23-3
Trans GP BJT NPN 40V 0.05A 3-Pin SOT-23 T/R - Tape and Reel
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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