Курс ЦБ на 01.05.2024
$91,78
€98,03
Infineon BFQ19SE6327
артикул BFQ19SE6327
Infineon
производитель
Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR
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Технические параметры
Technical
Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
15 V
Collector Emitter Voltage (VCEO)
15 V
Current Rating
75 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
3 V
Gain
11.5 dB
Gain Bandwidth Product
5.5 GHz
Max Breakdown Voltage
5 V
Max Collector Current
210 mA
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-65 °C
Packaging
Cut Tape (CT)
Polarity
NPN
Transition Frequency
5.5 GHz
Voltage Rating (DC)
15 V
Physical
Case/Package
SOT-89-4
Mount
Surface Mount
Number of Pins
4
Compliance
Lead Free
Lead Free
RoHS
Compliant
Показать все
Описание
Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Trans GP BJT NPN 15V 0.21A 4-Pin(3+Tab) SOT-89 T/R
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