Курс ЦБ на 02.05.2024
$91,78
€98,03
onsemi FGH40N60SMD
артикул FGH40N60SMD
onsemi
производитель
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
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Технические параметры
Technical
Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
1.9 V
Collector Emitter Voltage (VCEO)
600 V
Continuous Collector Current
80 A
Element Configuration
Single
Max Collector Current
80 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
349 W
Min Operating Temperature
-55 °C
Power Dissipation
349 W
Reverse Recovery Time
36 ns
Schedule B
8541290080, 8541290080; 8541290080
Turn-Off Delay Time
92 ns
Turn-On Delay Time
12 ns
Physical
Case/Package
TO-247
Mount
Through Hole
Number of Pins
3
Weight
6.39 g
Dimensions
Height
20.6 mm
Length
15.6 mm
Width
4.7 mm
Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
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Описание
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
FGH40N60SMD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
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