Курс ЦБ на 03.05.2024
$92,05
€98,64
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipSTMicroelectronics STGB7H60DF
STMicroelectronics STGB7H60DF
артикул STGB7H60DF
STMicroelectronics
производитель
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(2+Tab) D2PAK T/R
Datasheet
PDF | 991 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Technology
Field Stop; Trench
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±20
Maximum Collector-Emitter Voltage (V)
600
Typical Collector Emitter Saturation Voltage (V)
1.5
Maximum Continuous Collector Current (A)
14
Maximum Gate Emitter Leakage Current (uA)
0.25
Maximum Power Dissipation (mW)
88000
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
175
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
TO-263
Supplier Package
D2PAK
Mounting
Surface Mount
Package Height
4.6(Max)
Package Length
10.4(Max)
Package Width
9.35(Max)
PCB changed
2
Tab
Tab
Lead Shape
Gull-wing
Показать все
Описание
Minimize the current at your gate with the STGB7H60DF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 88000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 В°C and a maximum of 175 В°C. It is made in a single configuration.
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