IGBT MODULE, DUAL 600V; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:240A; Voltage, Vce Sat Max:1.9V; Case Style:SEMiX 2; Collector-to-Emitter Breakdown Voltage:600V; Current Ic Continuous b Max:270A; Current Ic av:240A; Current, Icm Pulsed:400A; External Depth:61.6mm; Fixing Centres:77mm; Fixing Hole Diameter:5.5mm; Power, Pd:45W; SMD Marking:SEMiX2; Temperature, Current:25°C; Time, Rise:78ns; Transistors, No. of:2; Width, External:116.5mm; Voltage:600V

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Технические параметры

Technical

Collector Emitter Breakdown Voltage

600 V

Collector Emitter Saturation Voltage

1.9 V

Collector Emitter Voltage (VCEO)

1.9 V

Max Operating Temperature

175 °C

Max Power Dissipation

45 W

Rise Time

78 ns

Voltage

600 V

Physical

Case/Package

Module

Number of Pins

7

Dimensions

Hole Diameter

5.5 mm

Width

116.5 mm

Compliance

REACH SVHC

No SVHC

RoHS

Compliant

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Описание

IGBT MODULE, DUAL 600V; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:240A; Voltage, Vce Sat Max:1.9V; Case Style:SEMiX 2; Collector-to-Emitter Breakdown Voltage:600V; Current Ic Continuous b Max:270A; Current Ic av:240A; Current, Icm Pulsed:400A; External Depth:61.6mm; Fixing Centres:77mm; Fixing Hole Diameter:5.5mm; Power, Pd:45W; SMD Marking:SEMiX2; Temperature, Current:25°C; Time, Rise:78ns; Transistors, No. of:2; Width, External:116.5mm; Voltage:600V