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Курс ЦБ на 02.05.2024
$91,78
€98,03

onsemi MMBFU310LT1G

артикул MMBFU310LT1G
onsemi
производитель
MMBFU310LT1G Series N-Channel 25 V 10 mA JFET Transistor - SOT-23
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Технические параметры
Technical
Breakdown Voltage
-25 V
Continuous Drain Current (ID)
60 mA
Current Rating
10 mA
Drain to Source Breakdown Voltage
25 V
Drain to Source Voltage (Vdss)
25 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
5 pF
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Power Dissipation
225 mW
Schedule B
8541210080, 8541210080; 8541210080
Voltage Rating (DC)
25 V
Physical
Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3
Weight
1.437803 g
Compliance
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
Supply Chain
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Описание

MMBFU310LT1G Series N-Channel 25 V 10 mA JFET Transistor - SOT-23

TRANSISTOR, JFET; N-CHANNEL; 25; 10 GATE TRIGGER; -25 VDC (MIN.); 2.5 PF (MAX.)

TRANSISTOR, JFET, N, 25V, SOT-23; Breakdown Voltage Vbr: 25V; Zero Gate Voltage Drain Current Idss Min: 24mA; Zero Gate Voltage Drain Current Idss Max: 60mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Capacitance Ciss Max: 5pF; Current Idss Max: 60mA; Current Idss Min: 24mA; Drain Source Voltage Vds: 25V; No. of Pins: 3Pins; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 225mW; Power Dissipation Ptot Max: 225mW; SMD Marking: 6C; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Voltage Vgs Off Min: -2.5V; Zero Gate Voltage Drain Current Idss: 24mA to 60mA

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB

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