Курс ЦБ на 29.04.2024
$91,78
€98,03
Vishay SI2300DS-T1-GE3
артикул SI2300DS-T1-GE3
Vishay
производитель
Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
В±12
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (В°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.1
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
68@4.5V
Typical Gate Charge @ Vgs (nC)
3@4.5V; 6.5@10V
Typical Gate Charge @ 10V (nC)
6.5
Typical Gate to Drain Charge (nC)
0.5
Typical Gate to Source Charge (nC)
0.8
Typical Reverse Recovery Charge (nC)
5
Typical Input Capacitance @ Vds (pF)
320@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
19@15V
Minimum Gate Threshold Voltage (V)
0.6
Typical Output Capacitance (pF)
45
Maximum Power Dissipation (mW)
1100
Typical Fall Time (ns)
11
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Maximum Power Dissipation on PCB @ TC=25В°C (W)
1100
Maximum Pulsed Drain Current @ TC=25В°C (A)
15
Maximum Junction Ambient Thermal Resistance on PCB (В°C/W)
115
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
1.8
Typical Reverse Recovery Time (ns)
11
Maximum Diode Forward Voltage (V)
1.2
Minimum Gate Resistance (Ohm)
0.6
Maximum Gate Resistance (Ohm)
6.4
Maximum Positive Gate Source Voltage (V)
12
Maximum Continuous Drain Current on PCB @ TC=25В°C (A)
3.1
Supplier Package
SOT-23
Pin Count
3
Standard Package Name
SOT
Mounting
Surface Mount
Package Height
1.02(Max)
Package Length
3.04(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
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Описание
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the SI2300DS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
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