Курс ЦБ на 02.05.2024
$91,78
€98,03
ГлавнаяКаталогDiodes, Transistors and ThyristorsFET TransistorsMOSFETsRochester Electronics J309_D26Z
Rochester Electronics J309_D26Z
артикул J309_D26Z
Rochester Electronics
производитель
Small Signal Transistors NCh RF Transistor
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Технические параметры
Technical
Continuous Drain Current (ID)
30 mA
Current Rating
30 mA
Drain to Source Breakdown Voltage
25 V
Drain to Source Voltage (Vdss)
25 V
Element Configuration
Single
Frequency
450 MHz
Gain
12 dB
Gate to Source Voltage (Vgs)
-25 V
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Noise Figure
3 dB
Power Dissipation
625 mW
Test Current
10 mA
Test Voltage
10 V
Voltage Rating
25 V
Voltage Rating (DC)
25 V
Physical
Case/Package
TO-92-3
Mount
Through Hole
Number of Pins
3
Weight
200.998119 mg
Dimensions
Height
5.33 mm
Length
5.2 mm
Width
4.19 mm
Compliance
Lead Free
Lead Free
RoHS
Compliant
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Описание
Small Signal Transistors NCh RF Transistor
IC SWITCH RF N-CH 25V 10MA TO-92
N-Channel RF Amplifier
