Курс ЦБ на 05.05.2024
$91,69
€98,56
onsemi NTMS4816NR2G
артикул NTMS4816NR2G
onsemi
производитель
NTMS4816NR2G N-channel MOSFET Transistor; 11 A; 30 V; 8-Pin SOIC
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Технические параметры
Technical
Continuous Drain Current (ID)
9 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
12.7 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.06 nF
Max Operating Temperature
150 °C
Max Power Dissipation
780 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
2.04 W
Rds On Max
10 mΩ
Rise Time
3.8 ns
Schedule B
8541290080, 8541290080; 8541290080
Turn-Off Delay Time
21.6 ns
Turn-On Delay Time
8 ns
Physical
Case/Package
SOIC
Contact Plating
Tin
Number of Pins
8
Dimensions
Height
1.5 mm
Length
5 mm
Width
4 mm
Compliance
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Supply Chain
Lifecycle Status
EOL (Last Updated: 4 days ago)
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
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Описание
NTMS4816NR2G N-channel MOSFET Transistor; 11 A; 30 V; 8-Pin SOIC
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel
Single N-Channel Power MOSFET 30V, 11A, 10mΩ
Mosfet, N-Ch, 30V, 11A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0082Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
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