Курс ЦБ на 26.04.2024
$92,13
€98,71
NXP Semiconductors MRF101AN
артикул MRF101AN
NXP Semiconductors
производитель
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.75
Automotive
No
PPAP
No
Configuration
Single
Type
MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Mode of Operation
CW
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
133
Maximum Gate Source Voltage (V)
10
Maximum Gate Threshold Voltage (V)
2.7
Maximum VSWR
65
Maximum Gate Source Leakage Current (nA)
1000
Maximum IDSS (uA)
10
Typical Input Capacitance @ Vds (pF)
149@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
0.96@50V
Typical Output Capacitance @ Vds (pF)
43.4@50V
Typical Forward Transconductance (S)
7.1
Maximum Power Dissipation (mW)
182000
Output Power (W)
115(Typ)
Typical Power Gain (dB)
21.1
Maximum Frequency (MHz)
250
Typical Drain Efficiency (%)
76.7
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
150
Packaging
Tube
Supplier Package
TO-220
Pin Count
3
Mounting
Through Hole
Package Height
8.39(Min)
Package Length
10.47(Max)
Package Width
4.83(Max)
PCB changed
3
Tab
Tab
Показать все
Описание
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
MRF Series 50 V 250 MHz 100 W CW Wideband RF Power LDMOS Transistor - TO220-3
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube
RF FET TRANSISTOR, 133V, 182W, TO-220; Drain Source Voltage Vds: 133V; Continuous Drain Current Id: -; Power Dissipation Pd: 182W; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 250MHz; RF Transistor Case: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: MRF101AN; MRF101BN; MSL: -; SVHC: No SVHC (15-Jan-2019)
