Курс ЦБ на 27.04.2024
$92,01
€98,72
Vishay IRF9620PBF
артикул IRF9620PBF
Vishay
производитель
Trans MOSFET P-CH 200V 3.5A 3-Pin(3+Tab) TO-220AB
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
HEXFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
3.5
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain Source Resistance (mOhm)
1500@10V
Typical Gate Charge @ Vgs (nC)
22(Max)@10V
Typical Gate Charge @ 10V (nC)
22(Max)
Typical Input Capacitance @ Vds (pF)
350@25V
Maximum Power Dissipation (mW)
40000
Typical Fall Time (ns)
15
Typical Rise Time (ns)
25
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
15
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Supplier Package
TO-220AB
Pin Count
3
Standard Package Name
TO-220
Mounting
Through Hole
Package Height
9.01(Max)
Package Length
10.41(Max)
Package Width
4.7(Max)
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
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Описание
As an alternative to traditional transistors, the IRF9620PBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 40000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 В°C to 150 В°C. This device utilizes HEXFET technology.
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