PDTA114ET - 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
PNP - Pre-Biased 250mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
NEXPERIA - PDTA114ET,215 - TRANS, PNP, W/RES 2X10K, 50V, SOT23
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain Max (hfe):30; Operating Temperature Range:-65°C to +150°C ;RoHS Compliant: Yes
TRANSISTOR, RF, PNP, -50V, SOT-23-3; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2013); MSL:-