Курс ЦБ на 03.05.2024
$92,05
€98,64
onsemi FGA6540WDF
артикул FGA6540WDF
onsemi
производитель
Trans IGBT Chip N=-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Rail
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Технические параметры
Technical
Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.8 V
Collector Emitter Voltage (VCEO)
2.3 V
Element Configuration
Single
Max Collector Current
80 A
Max Operating Temperature
175 °C
Max Power Dissipation
238 W
Min Operating Temperature
-55 °C
Reverse Recovery Time
101 ns
Schedule B
8541290080
Physical
Mount
Through Hole
Weight
6.401 g
Compliance
RoHS
Compliant
Supply Chain
Lifecycle Status
EOL (Last Updated: 4 days ago)
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
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Описание
Trans IGBT Chip N=-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Rail
IGBT, 650 V, 40 A Field Stop Trench
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors FS3TIGBT TO3PN 40A 650V
FAST & ULTRAFAST RECOVERY RECTIFIERS;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder application where low conduction and switching losses are essential.
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