Курс ЦБ на 05.05.2024
$91,69
€98,56
STMicroelectronics STS11NF30L
артикул STS11NF30L
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
STripFET II
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
В±18
Maximum Continuous Drain Current (A)
11
Maximum Drain Source Resistance (mOhm)
10.5@10V
Typical Gate Charge @ Vgs (nC)
22.5@5V
Typical Input Capacitance @ Vds (pF)
1440@25V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
16
Typical Rise Time (ns)
39
Typical Turn-Off Delay Time (ns)
23
Typical Turn-On Delay Time (ns)
22
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Pin Count
8
Standard Package Name
SOP
Supplier Package
SO N
Mounting
Surface Mount
Package Height
1.65(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
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Описание
Use STMicroelectronics&s; STS11NF30L power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C. This device is made with stripfet ii technology.
Кроссы
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